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| DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES * High power gain * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes. 1 Top view BFG16A PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter fpage 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 110 C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - -65 - MAX. 40 25 2 150 1 +150 150 UNIT V V V mA W C C PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 110 C; note 1 IC = 150 mA; VCE = 5 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C open base CONDITIONS open emitter MIN. - - - - 25 - - TYP. - - - - 80 1.5 10 MAX. 40 25 150 1 - - - GHz dB UNIT V V mA W 1995 Sep 12 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT GUM Note PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain note 1 CONDITIONS open emitter; IC = 0.1 mA open base; IC = 10 mA MIN. 25 18 3 - 25 - - - - - TYP. - - - - 80 2.5 10.0 1.5 1.5 10 PARAMETER CONDITIONS 40 VALUE BFG16A UNIT K/W thermal resistance from junction up to Ts = 110 C; note 1 to soldering point MAX. - - - 20 - - - - - - UNIT V V V A pF pF pF GHz dB emitter-base breakdown voltage open collector; IE = 0.1 mA IE = 0; VCB = 28 V IC = 150 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 10 V; f = 1 MHz IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 1995 Sep 12 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A MBG198 MBB365 handbook, halfpage P 1.2 tot (W) handbook, halfpage 160 1.0 h FE 120 0.8 0.6 80 0.4 40 0.2 0 0 50 100 150 200 T s ( o C) 0 0 100 I C (mA) 200 VCE = 10 V; Tj = 25 C. Fig.3 Fig.2 Power derating curve. DC current gain as function of collector current. MBB363 handbook, halfpage 5 C re (pF) handbook, halfpage 2 MBB364 fT (GHz) 4 1.6 3 1.2 2 0.8 1 0.4 0 0 4 8 12 16 20 VCB (V) 0 0 40 80 120 I C (mA) 160 IC = ic = 0; f = 1 MHz. VCE = 10 V; f = 500 MHz; Tamb = 25 C. Fig.4 Feedback capacitance as function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. 1995 Sep 12 4 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A 50 handbook, full pagewidth 25 3 GHz 100 10 250 +j 0 -j 10 25 50 100 250 10 40 MHz 250 25 50 IC = 70 mA; VCE = 15 V; Zo = 50 . 100 MBB366 Fig.6 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 120 o 40 MHz 150 o 60 o 30 o 180 o 50 40 30 20 10 3 GHz 0o 150 o 30 o 120 o 90 o IC = 70 mA; VCE = 15 V. 60 o MBB367 Fig.7 Common emitter forward transmission coefficient (S21). 1995 Sep 12 5 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A 90 o handbook, full pagewidth 120 o 60 o 150 o 3 GHz 30 o 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 150 o 30 o 120 o 90 o IC = 70 mA; VCE = 15 V. 60 o MBB368 Fig.8 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 3 GHz 250 +j 0 -j 10 25 50 100 250 10 40 MHz 250 25 50 IC = 70 mA; VCE = 15 V; Zo = 50 . 100 MBB369 Fig.9 Common emitter output transmission coefficient (S22). 1995 Sep 12 6 Philips Semiconductors Product specification NPN 2 GHz wideband transistor PACKAGE OUTLINE BFG16A handbook, full pagewidth 0.95 0.85 S seating plane 6.7 6.3 3.1 2.9 0.1 S 0.32 0.24 B 0.2 M A 4 A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 o max 2 0.80 0.60 4.6 3 2.3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.10 SOT223. 1995 Sep 12 7 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BFG16A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 8 |
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